Semiconductor Power Devices Physics Characteristics Reliability

The physics of power devices focuses on managing high electric fields and large current densities while minimizing energy loss.

Operation is limited by the impact ionization process, where a high electric field accelerates carriers to energies sufficient to create additional electron-hole pairs, leading to a sudden surge in current. The physics of power devices focuses on managing

However, WBG devices introduce new reliability challenges: enhanced sensitivity to gate oxide defects (for SiC MOSFETs), current collapse (for GaN HEMTs), and more complex failure modes under fast transients. current collapse (for GaN HEMTs)

Silicon has reached its material limits. Wide bandgap semiconductors (SiC, GaN) offer: The physics of power devices focuses on managing